Optimization of Transfer Times in Pinned Photodiodes

Lutz Girgenrath, Martin Hofmann, Ralf Kühnhold, Holger Vogt

2017

Abstract

An implantation scheme which enhances the readout speed of a silicon pinned photodiode (PPD) with large pixel length is presented. The basic PPD structure was developed for Time-of-Flight (TOF) distance measurement applications by the Fraunhofer IMS in Duisburg, Germany, and was fabricated in a standard 0.35 μm CMOS process. The optimized design of this PPD introduces the possibility to improve the electron readout speed by changing the n-well configuration with a second well implantation. The local increase in doping concentration creates a designated electron path which utilizes the reset voltage of the readout node. This behaviour is shown by simulation and measurement results are presented.

Paper Citation

in Harvard Style

Girgenrath L., Hofmann M., Kühnhold R. and Vogt H. (2017). Optimization of Transfer Times in Pinned Photodiodes . In Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-223-3, pages 312-316. DOI: 10.5220/0006239603120316

in Bibtex Style

@conference{photoptics17,
author={Lutz Girgenrath and Martin Hofmann and Ralf Kühnhold and Holger Vogt},
title={Optimization of Transfer Times in Pinned Photodiodes},
booktitle={Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2017},
pages={312-316},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0006239603120316},
isbn={978-989-758-223-3},
}

in EndNote Style

TY - CONF
JO - Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Optimization of Transfer Times in Pinned Photodiodes
SN - 978-989-758-223-3
AU - Girgenrath L.
AU - Hofmann M.
AU - Kühnhold R.
AU - Vogt H.
PY - 2017
SP - 312
EP - 316
DO - 10.5220/0006239603120316